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DCR1910V85
Phase Control Thyristor Preliminary Information
DS5878-1.1 NOV 2006 (LN24964)
FEATURES
* * Double Side Cooling High Surge Capability
KEY PARAMETERS VDRM IT(AV) ITSM dV/dt* dI/dt 8500V 1910A 25000A 1500V/s 300A/s
APPLICATIONS
* * * High Power Drives High Voltage Power Supplies Static Switches
* Higher dV/dt selections available
VOLTAGE RATINGS
Part and Ordering Number Repetitive Peak Voltages VDRM and VRRM V 8500 8000 7500 7000 Conditions
DCR1910V85 DCR1910V80 DCR1910V75 DCR1910V70
Tvj = -40 to 125 C C, IDRM = IRRM = 300mA, VDRM, VRRM tp = 10ms, VDSM & VRSM = VDRM & VRRM + 100V respectively
Lower voltage grades available.
ORDERING INFORMATION
When ordering, select the required part number shown in the Voltage Ratings selection table. For example: DCR1910V85
Note: Please use the complete part number when ordering and quote this number in any future correspondence relating to your order. Outline type code: V (See Package Details for further information)
Fig. 1 Package outline
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DCR1910V85
SEMICONDUCTOR
CURRENT RATINGS
Tcase = 60 unless stated otherwise C
Symbol Double Side Cooled IT(AV) IT(RMS) IT
Parameter
Test Conditions
Max.
Units
Mean on-state current RMS value Continuous (direct) on-state current
Half wave resistive load -
1910 3000 2975
A A A
SURGE RATINGS
Symbol ITSM It
2
Parameter Surge (non-repetitive) on-state current I t for fusing
2
Test Conditions 10ms half sine, Tcase = 125 C VR = 0
Max. 25.0 3.125
Units kA MA s
2
THERMAL AND MECHANICAL RATINGS
Symbol Rth(j-c) Parameter Thermal resistance - junction to case Test Conditions Double side cooled Single side cooled DC Anode DC Cathode DC Rth(c-h) Thermal resistance - case to heatsink Clamping force 54.0kN (with mounting compound) Tvj Virtual junction temperature On-state (conducting) Reverse (blocking) Tstg Fm Storage temperature range Clamping force Double side Single side Min. -55 48 Max. 0.00746 0.0130 0.0178 0.002 0.004 135 125 125 59 Units C/W C/W C/W C/W C/W C C C kN
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DCR1910V85
SEMICONDUCTOR
DYNAMIC CHARACTERISTICS
Symbol IRRM/IDRM dV/dt dI/dt
Parameter Peak reverse and off-state current Max. linear rate of rise of off-state voltage Rate of rise of on-state current
Test Conditions At VRRM/VDRM, Tcase = 125 C To 67% VDRM, Tj = 125 gate open C, From 67% VDRM to 2x IT(AV) Gate source 30V, 10, tr < 0.5s, Tj = 125 C
Repetitive 50Hz Non-repetitive
Min. -
Max. 300 1500 150 300
Units mA V/s A/s A/s
VT(TO)
Threshold voltage - Low level Threshold voltage - High level
100A to1000A at Tcase = 125 C 1000A to 7200A at Tcase = 125 C 100A to 1000A at Tcase = 125 C 1000A to 7200A at Tcase = 125 C VD = 67% VDRM, gate source 30V, 10 tr = 0.5s, Tj = 25 C
TBD
0.9 1.3 0.888 0.55 TBD
V V m m s
rT
On-state slope resistance - Low level On-state slope resistance - High level
tgd
Delay time
tq
Turn-off time
Tj = 125 V R = 200V, dI/dt = 1A/s, C, dVDR/dt = 20V/s linear
-
1200
s
QS IL IH
Stored charge Latching current Holding current
IT = 2000A, Tj = 125 dI/dt - 1A/s, C, Tj = 25 V D = 5V C, Tj = 25 R G-K = , ITM = 500A, IT = 5A C,
4800 TBD TBD
8000 TBD TBD
C mA mA
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DCR1910V85
SEMICONDUCTOR
GATE TRIGGER CHARACTERISTICS AND RATINGS
Symbol VGT VGD IGT IGD
Parameter Gate trigger voltage Gate non-trigger voltage Gate trigger current Gate non-trigger current
Test Conditions VDRM = 5V, Tcase = 25 C At VDRM, Tcase = 125 C VDRM = 5V, Tcase = 25 C VDRM = 5V, Tcase = 25 C
Max. 1.5 TBD 250 TBD
Units V V mA mA
CURVES
7000
Instantaneous on-state current IT - (A)
6000 5000 4000 3000 2000 1000 0 0.0
min 125 C max 125 C min 25 C max 25 C
2.0
4.0
6.0
Instantaneous on-state voltage VT - (V)
Fig.2 Maximum & minimum on-state characteristics
VTM EQUATION VTM = A + Bln (IT) + C.IT+D.IT
Where
A = 0.398265 B = 0.121095 C = 0.000524 D = -0.000007 these values are valid for Tj = 125 for I T 500A to 7200A C
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DCR1910V85
SEMICONDUCTOR
10
130
Maximum case temperature, T case ( C )
9
120 110 100 90 80 70 60 50 40 30 20 10 0 0 1000 2000
Mean power dissipation - (kW)
8 7 6 5 4 3 2 1 0 0 500 1000 1500 2000 2500
180 120 90 60 30
180 120 90 60 30
o
3000
Mean on-state current, IT(AV) - (A)
Mean on-state current, IT(AV) - (A)
Fig.3 On-state power dissipation - sine wave Fig.4 Maximum permissible case temperature, double side cooled - sine wave
(o C )
130 120 110 100 90 80 70 60 50 40 30 20 10 0 0 500 1000 1500 2000 2500 180 120 90 60 30
12 11 10
Heatsink -
Mean power dissipation - (kW)
Maximum heatsink temperature, T
9 8 7 6 5 4 3 2 1 0 0 500 1000 1500 2000 2500 3000 3500 d.c. 180 120 90 60 30
Mean on-state current, IT(AV) - (A)
Mean on-state current, IT(AV) - (A)
Fig.5 Maximum permissible heatsink temperature, double side cooled - sine wave Fig.6 On-state power dissipation - rectangular wave
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DCR1910V85
SEMICONDUCTOR
Maximum permissible case temperature ,T case -( C)
130
Maximum heatsink temperature Theatsink -(o C)
130 d.c. 180 120 90 60 30 120 110 100 90 80 70 60 50 40 30 20 10 0
0 500 1000 1500 2000 2500 3000 3500 4000 4500
120 110 100 90 80 70 60 50 40 30 20 10 0
d.c. 180 120 90 60 30
0
500 1000 1500 2000 2500 3000 3500 4000
Mean on-state current, IT(AV) - (A)
Mean on-state current, IT(AV) - (A)
Fig.7 Maximum permissible case temperature, double side cooled - rectangular wave
Fig.8 Maximum permissible heatsink temperature, double side cooled - rectangular wave
1 0.9206 0.0076807 0.9032 0.0075871 0.9478 0.0078442 2 1.8299 0.0579454 1.6719 0.0536531 2.0661 0.0645541 3 3.4022 0.4078613 3.0101 0.3144537 1.6884 0.3894389 4 1.3044 1.2085 7.4269 5.624 13.0847 4.1447
20
Double side cooled Anode side cooled
Ri ( C/kW) Ti (s) Ri ( C/kW) Ti (s) Ri ( C/kW) Ti (s)
Thermal Impedance , Z th(j-c) - ( C/kW)
18 16 14 12 10 8 6 4 2 0 0.001 Double Side Cooling Anode Side Cooling Cathode Sided Cooling
Cathode side cooled
Zth = [Ri x ( 1-exp. (t/ti))]
Rth(j-c) Conduction
[1]
Tables show the increments of thermal resistance R th(j-c) when the device operates at conduction angles other than d.c.
Double side cooling Zth (z) 180 120 90 60 30 15 sine. 1.34 1.57 1.83 2.08 2.27 2.36 rect. 0.88 1.30 1.54 1.81 2.11 2.28 180 120 90 60 30 15 Anode Side Cooling Zth (z) sine. 1.34 1.57 1.84 2.08 2.28 2.37 rect. 0.88 1.30 1.54 1.81 2.11 2.28 Cathode Sided Cooling Zth (z) 180 120 90 60 30 15 sine. 1.33 1.57 1.83 2.07 2.26 2.35 rect. 0.88 1.29 1.53 1.80 2.10 2.26
0.01
0.1
1
10
100
Time ( s )
Fig.9 Maximum (limit) transient thermal impedance - junction to case ( C/kW)
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DCR1910V85
SEMICONDUCTOR
70 25 Conditions: Tcase = 125 C VR =0 Pulse width = 10ms 60
6
ITSM
I2t
5
Surge current, ITSM- (kA)
Surge current, ITSM - (kA)
50 4
2
20
40 3 30 20 10 Conditions: Tcase= 125 C VR = 0 half-sine wave 2
15
1
10 1 10 100
0 1 10
0 100
Number of cycles
Pulse width, tP - (ms)
Fig.11 Single-cycle surge current
Fig.10 Multi-cycle surge current
30000 QSmax = 63578*Ln(di/dt) + 6206
Reverse receovery current, IRR - (A)
600 IRRmax = 63.4*(di/dt)0.6984
25000
500
Stored Charge, Qs - (uC)
20000
400
15000
QSmin = 5233*Ln(di/dt) + 4211
Conditions: Tj = 125 C, VRpeak ~ 5100V VRM ~ 3400V snubber as appropriate to control reverse
o
300
IRRmin = 51.3*(di/dt)0.7453
10000
200
Conditions: Tj = 125 C, VRpeak ~ 5100V VRM ~ 3400V snubber as appropriate to control reverse votages
o
5000
100
0 0 5 10 15 20 25 Rate of decay of on-state current, di/dt - (A/us)
0 0 5 10
15
20
25
Rate of decay of on-state current, di/dt - (A/us)
Fig.12 Stored charge
Fig.13 Reverse recovery current
I t (MA s)
2
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DCR1910V85
SEMICONDUCTOR
PACKAGE DETAILS
For further package information, please contact Customer Services. All dimensions in mm, unless stated otherwise. DO NOT SCALE.
3rd ANGLE PROJECTION
DO NOT SCALE
IF IN DOUBT ASK HOLE O3.60 X 2.00 DEEP (IN BOTH ELECTRODES)
20 OFFSET (NOM.) TO GATE TUBE
O110.0 MAX. CATHODE
O1.5
O73.0 NOM.
Device DCR1474SV18 DCR1475SV28 DCR1476SV42 DCR1478SV48 DCR1574SV28 DCR1575SV42 DCR1576SV52 DCR4060V22 DCR3780V28 DCR3030V42 DCR2720V52 DCR2290V65 DCR1910V85
Maximum Minimum Thickness Thickness (mm) (mm) 27.265 26.515 27.34 26.59 27.57 26.82 27.69 26.94 27.34 26.59 27.57 26.82 27.69 26.94 27.265 26.515 27.34 26.59 27.57 26.82 27.69 26.94 27.95 27.2 28.31 27.56
GATE ANODE O73.0 NOM. FOR PACKAGE HEIGHT SEE TABLE
Lead length: 420mm Lead terminal connector: M4 ring
Package outline type code: V
Fig.15 Package outline
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DCR1910V85
SEMICONDUCTOR
POWER ASSEMBLY CAPABILITY
The Power Assembly group was set up to provide a support service for those customers requiring more than the basic semiconductor, and has developed a flexible range of heatsink and clamping systems in line with advances in device voltages and current capability of our semiconductors. We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today. The Assembly group offers high quality engineering support dedicated to designing new units to satisfy the growing needs of our customers. Using the latest CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete Solution (PACs).
HEATSINKS
The Power Assembly group has its own proprietary range of extruded aluminium heatsinks which have been designed to optimise the performance of Dynex semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is available on request. For further information on device clamps, heatsinks and assemblies, please contact your nearest sales representative or Customer Services.
Stresses above those listed in this data sheet may cause permanent damage to the device. In extreme conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety precautions should always be followed. http://www.dynexsemi.com
e-mail: power_solutions@dynexsemi.com
HEADQUARTERS OPERATIONS DYNEX SEMICONDUCTOR LTD Doddington Road, Lincoln Lincolnshire, LN6 3LF. United Kingdom. Tel: +44(0)1522 500500 Fax: +44(0)1522 500550
CUSTOMER SERVICE Tel: +44(0)1522 502753 / 502901. Fax: +44(0)1522 500020
Dynex Semiconductor 2003 TECHNICAL DOCUMENTATION - NOT FOR RESALE. PRODUCED IN UNITED KINGDOM.
This publication is issued to provide information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or contract nor to be regarded as a representation relating to the products or services concerned. No warranty or guarantee express or implied is made regarding the capability, performance or suitability of any product or service. The Company reserves the right to alter without prior notice the specification, design or price of any product or service. Information concerning possible methods of use is provided as a guide only and does not constitute any guarantee that such methods of use will be satisfactory in a specific piece of equipment. It is the user's responsibility to fully determine the performance and suitability of any equipment using such information and to ensure that any publication or data used is up to date and has not been superseded. These products are not suitable for use in any medical products whose failure to perform may result in significant injury or death to the user. All products and materials are sold and services provided subject to the Company's conditions of sale, which are available on request. All brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners.
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